Guide Reduced Thermal Processing for ULSI

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During a variable interval of time that difference between the primary and secondary energy densities may be required to comply with a monotonous function of time. With that design of the apparatus, the method can be carried out only in dependence on the stored setpoints for the heating power independently of the pyrometer reading when an optimum heating power program has been established. In the defect-guarded method for a thermal processing of delicate components, the temperature of the components is changed in a reaction chamber by means of at least one heat source, which is automatically controlled by at least one heating power controller in dependence on control parameters.

The maximum heating power which is delivered by the heat source or heat sources in an interval of time is adjusted to different values in accordance with a program in consecutive intervals of time, which may be substantially as short as desired, inasmuch as such variations are required for the heating method, and said power is limited independently of the parameters used to automatically control the heating power. Sudden changes of the heating power are avoided.

Alternatively, the density of the energy which is emitted by the heat source or heat sources in consecutive intervals of time, which may be substantially as short as desired, is adjusted in accordance with a program to such limited values or to such different predeterminable values that in the reaction chamber the difference between the density of the energy emitted by the heat source or heat sources and the density of the energy emitted by the components is continuously held at the minimum which can be achieved, with small variations, throughout the thermal processing, and the heating power-time curve has predetermined ramp slopes.

The requirements to be met by a defect-guarded RTP method can well be complied with if the temperature-time program and lamp power-time program can be predetermined step for step either linearly or in accordance with certain mathematical functions. The functions may be, e. In the reaction chamber the component is irradiated from one or more sides and the radiation is substantially completely reflected by the reflecting wall surfaces of the reaction chamber. The density of the energy which is incident on the component from above and from below is adapted to be separately limited in different method steps in ratios which can substantially be selected as desired and is separately monitored and controlled.

The heating power of the lamps in the heat source or heat sources is automatically controlled for each lamp in order to improve the horizontal homogeneity of temperature. Because the rise of the heating power with time can be effected in any desired steps, it is possible to include in the program additional method steps, in which the heating power is constant so that the lateral and vertical inhomogeneities of temperature within the component can level at any desired time.

According to a further feature of the invention the component in the reaction chamber is concentrically surrounded by a ring or frame, which is made of a material that is similar to the material of the component and which has approximately the same thickness as the component so that local inhomogeneities of temperature in the component, particularly in marginal areas, will be reduced.


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For the processing of conventional semiconductor wafers, the lamps of the heat sources may consist of tungsten-halogen lamps and may be used in combination with a pyrometer having a response time of about 50 ms. The optical monitoring of temperature in the system may be calibrated even under process conditions. The calibration will be performed automatically and with a high resolution at least 0.

Any desired time-dependent courses of rising "ramp up" and falling "ramp down" slopes can be programmed for the temperature control and desirably for the control of the purging with gas in the reaction chamber. Two illustrative embodiments of the apparatus in accordance with the invention will be described hereinafter. In the first illustrative embodiment, an apparatus for the defect-guarded thermal processing of delicate components comprises at least one heat source, which is arranged in a reaction chamber and is automatically controlled by a heating power controller in dependence on control parameters and used to change the temperature of the components.

The power of the heat source or heat sources can be adjusted in accordance with a program to different values in consecutive intervals of time, which may be as short as desired, and independently of the parameters for the automatic heating power control. The measured values of the substrate temperature and the values of the manipulated inputs for the control of the heating power can be stored at the same time, and any desired lamp power-time functions can be used for subsequent runs as a defined heating power program for monitoring the heating power independently of the pyrometer signal.

Alternatively, in the second illustrative embodiment, the density of the energy emitted by the heat source or heat sources in consecutive intervals of time, which may substantially be as short as desired, may be adjusted in accordance with a program to limited values or to different predetermined values in such a manner that in the reaction chamber the difference between the density of the energy emitted by the heat source or heat sources and the density of the energy emitted by the component is continuously held at the minimum which can be achieved, with small variations, throughout the thermal processing and the heating power-time curve has predetermined ramp slopes.

The heat source or heat sources and their lamps are so arranged in the reaction chamber that the component can be irradiated from more than one side and the wall surfaces of the reaction chamber are designed to substantially completely reflect the heating radiation.

The density of the energy acting on the component from above and from below in different method steps is adapted to be separately limited in any desired selectable ratios by the heating power controller and to be separately monitored and controlled. To improve the horizontal homogeneity of temperature the heating powers of the lamps of a heat source can individually be controlled by the heating power controller.

If the rise of the heating power with time is effected in any desired steps the program may also comprise method steps in which the substrate temperature is constant so that the lateral and vertical inhomogeneities of temperature within the component can level at any desired time. According to a further feature of the invention the reaction chamber of the apparatus contains a concentrically arranged ring or frame, which is made of a material that is similar to the material of the component and has about the same thickness as the component so that local inhomogeneities of temperature in the component, particularly in marginal areas, will be reduced.

The ratios of the several consecutive power steps are as follows:. The sample used consisted of a silicon wafer mm in diameter. Curve G indicates the peak of the heating power of the lamp during the heating-up mode. Curve H indicates the stepwise increase of the heating power. In FIG. In curve K the rates achieved in the method in accordance with the invention and in curve L the rates achieved in the conventional method are plotted against time.

It is clearly apparent that the deviations are very small during the temperature rise and that in the method in accordance with the invention the temperature descent is programmed to be effected in two steps so that the defect rate will be further reduced. That measurement was also effected with a silicon substrate that was mm in diameter. In curve M the pyrometer readings are plotted against time. In curve N the limited lamp powers increased in steps are plotted against time. The invention permits a defect-guarded rapid thermal processing of delicate components.

As a result of the invention, the occurrence of defects caused in a rapid thermal processing by inhomogeneities of temperature can be reduced. In the corresponding system a defect-guarded RTP method is carried out in such a manner that the energy density of the heating means in consecutive intervals of time, which may be as short as desired, is adjusted by an automatic control of such limiting values or to such fixed values that in the reaction chamber the difference between the primary and secondary energy densities is almost continuously held at the minimum which can be achieved throughout the thermal processing and the ramps have predetermined slopes.

- Document - Fast thermal processing: batch comes back

Effective date : Year of fee payment : 4. Year of fee payment : 8. Year of fee payment : A low defect rate is provided in rapid thermal processing of delicate components with reduction of defects caused by inhomogeneities of temperature during a rapid thermal processing. In a suitable system a defect-guarded RTP method is carried out in such a manner that the density of the heating energy is adjusted in consecutive intervals of time, which may be as short as desired, to such automatically controlled limiting values or to such fixed values that in the reaction chamber the difference between the primary and secondary energy densities is almost continuously held at the minimum which is achievable throughout the thermal processing whereas the ramps have predetermined slopes.

Field of the Invention This invention relates to a method for a fast thermal treatment of delicate components, particularly of components made by or used in the semiconductor industry, comprising heating in a reaction chamber by at least one heat source that is automatically controlled by a heating power controller and used to change the temperature of the components, and also relates to an apparatus for a rapid thermal processing of delicate components, particularly for a processing of components made by or used in the semiconductor industry, comprising at least one heat source, which is disposed in a reaction chamber and is automatically controlled by a heating power controller and used to change the temperature of the components.

Description of the Prior Art Rapid heating is a highly versatile optical heating process, which can mainly be used in semiconductor technology. All effects mentioned hereinbefore may be superposed in an RTP process. The following hardware effects are presently regarded as physical causes of inhomogeneities of temperature occurring in the RTP process: 1. Hardware effects a Modes of irradiation which may be used in the RTP chamber include, e. The following effects will now be discussed regarding the substrate: 2.

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Marginal effect The secondary energy flux, i. Effect of structures Thin optical films, which are geometrically structured and provided on the surface of the wafer, may effect a constructive or destructive interference in a part of the radiant energy and may thus give rise to structure-determined inhomogeneities of temperature. We claim: 1. As the semiconductor industry continues its evolution, so too must its constituent parts evolve.

Simultaneous market pressures to reduce costs through economies of scale and to deliver more capable products continue to drive innovation. Progress continues and mm now begins to gather momentum as the next substrate standard. Additionally, critical device dimensions continue to shrink past 0. The next generation device technologies will demand tighter thermal budgets and shallower junctions with abrupt doping profiles to meet leakage current, mobility, and short channel requirements.

The mainstay for thermal processing has been the large batch furnace. Furnace technology has advanced through improvements in process gas metering, wafer handling automation, and systems control, but the fundamental batch furnace concept has remained relatively constant, with the notable exception being the horizontal to vertical conversion.

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How then does the batch furnace expect to meet the needs of reduced thermal budgets for [less than or equal to]0. Wir empfehlen, Ihren Browser auf die neueste Version zu aktualisieren. If you have on a sexual book, like at property, you can know an fight device on your concept to have facial it is highly based with usefulness.

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Introduction: History and Perspectives of Rapid Thermal Processing

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